PackageIF(AV) (A)Rev. Voltage (V)VF@IF (V, A)IFSM (A)trr (ns)IRM (mA)Tj max (°C)Diode VariationsSnap factorEAS (mJ)TO-263AB (D2 Pak)15300.47 183 @ 125°C150Common Cathode13
MBRB3030CTL |
RFQ for MBRB3030CTL |
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| Technical/Catalog Information | MBRB3030CTLG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) (per Diode) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 440mV @ 15A |
| Current - Reverse Leakage @ Vr | 2mA @ 30V |
| Reverse Recovery Time (trr) | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRB3030CTLG MBRB3030CTLG |
| Product | Manufacturers | Pack | D/C | |||||||||||
| MBRB3030CTL | ON Semiconductor | D2PAK 3 LEAD | `06+(pb-free) |
This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 junction temperature. Typical applications are inswitching power supplies, converters, free-wheeling diodes,and reverse battery protection.
Features |
| 150° C TJ operationCenter tap configurationVery low forward voltage dropHigh purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistanceHigh frequency operationGuard ring for enhanced ruggedness and long termreliability |
| Parameters | Values | Units | Conditions | |
| IF(AV) Max. Average Forward (Per Leg)Current * See Fig. 5 (Per Device) | 15 | A | 50% duty cycle @ TC = 121°C, rectangular wave form | |
| 30 | ||||
| IFSM Max. Peak One Cycle Non-RepetitiveSurge Current (Per Leg) * See Fig. 7 | 1100 | A | 5s Sine or 3s Rect. pulse | Following any rated load condition and with rated VRRM applied |
| 360 | 10ms Sine or 6ms Rect. pulse | |||
| EAS Non-Repetitive Avalanche Energy(Per Leg) | 13 | mJ | TJ = 25 °C, IAS = 3 Amps, L = 2.9 mH | |
| IAR Repetitive Avalanche Current(Per Leg) | 3 | A | Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical | |
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